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X-ray topographic study of GaSb substrates for epitaxial layer growth
Authors:I S Vassilev  L D Pramatarova  M B Baeva
Abstract:The depth of the layer damaged by silicing of GaSb ingots has been determined by X-ray topography. The changes in the defect structure of substrates after successive etching to different depths by Br2/CH3OH and 1 HF:3 NNO3:1 CH3COOH have been studied. The effect of heat treatment carried out under conditions similar to the epitaxial process of substrates with completely removed damaged layer has been investigated.
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