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Development of dip-coated Cu2ZnSnS4 absorber material without sulphurisation
Authors:Ziti  Ahmed  Hartiti  Bouchaib  Labrim  Hicham  Batan  Abdelkrim  Fadili  Salah  Ridah  Abderraouf  Tahri  Mounia  Belafhaili  Amine  Thevenin  Philippe
Affiliation:1.ERDyS laboratory, MEEM & DD Group, Hassan II University of Casablanca, FSTM BP 146, Mohammedia, 20650, Morocco
;2.LIMAT laboratory, Department of Physics FSB, Hassan II University of Casablanca, Mohammedia, 20650, Morocco
;3.DERS, CNESTEN, Rabat, Morocco
;4.IMERN Laboratory, SME2D Team, FST Errachidia, University Moulay Ismail of Meknes, BP 509 Boutalamine, 52000, Errachidia, Morocco
;5.Centre for Electron Microscopy, Faculty of Sciences, Mohammed V University, Rabat, Morocco
;6.University of Lorraine, LMOPS, METZ, France
;
Abstract:Journal of Sol-Gel Science and Technology - Quaternary semiconductor Cu2ZnSnS4 absorber material was synthesized by the sol-gel method deposited by the dip-coating technique on ordinary glass...
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