Picosecond optoelectronic characterization of diode lasers |
| |
| Authors: | Galvanauskas A Krotkus A Adomaitis E Grosenick D Klose E |
| |
| Institution: | (1) Semiconductor Physics Institute, Lithuanian Academy of Sciences, Pozelos 52, 232600 Vilnius, Lithuania;(2) Zentralinstitut für Optik und Spektroskopie, Rudower Chaussee 6, 1199 Berlin, Germany |
| |
| Abstract: | New optoelectronic techniques for measuring semiconductor laser turn-on delay times and jitter with a picosecond temporal resolution are proposed and were employed for both conventional, homogeneous cavity and ion-bombarded picosecond diode laser characterization. Distinct differences in the characteristics of those lasers were found. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
