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| AlGaN /GaN分布布拉格反射镜的MOCVD生长 | |
| 引用本文： | 李 亮 张 荣,谢自力,张 禹,修向前,姬.AlGaN /GaN分布布拉格反射镜的MOCVD生长[J].激光与红外,2005,35(11):891-893. |
| 作者姓名： | 李 亮 张 荣 谢自力 张 禹 修向前 姬 |
| 作者单位： | 1. 江苏省光电信息功能材料重点实验室,南京大学物理系,江苏,南京,210093 2. 江苏省光电信息功能材料重点实验室,南京大学物理系,江苏,南京,210093;北京科技大学物理系,北京,100083 3. 中国科学院上海技术物理研究所,上海,200080 |
| 摘 要： | 文中利用MOCVD方法,采用高质量GaN作为缓冲层,在（0001）取向的蓝宝石衬底上实现了不同组分的AlxGa1-xN/GaN分布布拉格反射镜（DBR）的制备.通过XRD、SEM、AFM、反射谱等测量分析手段,研究了AlxGa1-xN/GaN DBR的结构质量、厚度和表面形貌. |
| 关 键 词： | AlGaN GaN 分布布拉格反射镜 MOCVD |
| 文章编号： | 1001-5078（2005）11-0891-03 |
| 收稿时间： | 2005-08-26 |
| 修稿时间： | 2005-08-26 |
MOCVD Growth of AlGaN/GaN Distributed Bragg Reflectors |
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| LI Liang,ZHANG Rong,XIE Zi-li,ZHANG Yu,XIU Xiang-qian,JI Xiao-li,LIU Cheng-xiang,BI Zhao-xia,CHEN Lin,ZHOU Jian-jun,LIU Bin,HAN Ping,JIANG Ruo-lian,GU Sbu-lin,SHI Yi,GONG Hai-mei,ZHENG You-dou.MOCVD Growth of AlGaN/GaN Distributed Bragg Reflectors[J].Laser & Infrared,2005,35(11):891-893. | |
| Authors: | LI Liang ZHANG Rong XIE Zi-li ZHANG Yu XIU Xiang-qian JI Xiao-li LIU Cheng-xiang BI Zhao-xia CHEN Lin ZHOU Jian-jun LIU Bin HAN Ping JIANG Ruo-lian GU Sbu-lin SHI Yi GONG Hai-mei ZHENG You-dou |
| Institution: | 1. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China; 2. Department of Physics, School of Applied Science, University of Science and Technology Beijing, Beijing 100083, China; 3. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
| Abstract: | A number of distributed Bragg reflectors(DBRs) based on Al_xGa_(1-x)N/GaN quarterwave layers with various Al content have been grown on(0001) sapphire substrates using high quality GaN buffers by metalorganic chemical vapor deposition(MOCVD).XRD,AFM,SEM and reflectance measurement are employed to analyze the structure quality,thickness and surface morphology of Al_xGa_(1-x)N/GaN DBRs. |
| Keywords: | AlGaN GaN distributed Bragg reflectors MOCVD |
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