Mechanism of current flow in alloyed ohmic In/GaAs contacts |
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| Authors: | T V Blank Yu A Gol’dberg O V Konstantinov V G Nikitin E A Posse |
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| Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | A mechanism of current flow in an alloyed ohmic In contact to low-doped gallium arsenide (n = 4 × 1015 cm?3) is studied. From the temperature dependence of the contact resistance per unit surface area, it is found that the basic mechanism of current flow is thermionic emission through a potential barrier 0.03 eV in height. |
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