| 玷污硅片的无损检测及洁净工艺 |
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| 引用本文： | 石国华 曾庆诚. 玷污硅片的无损检测及洁净工艺[J]. 浙江大学学报(理学版), 1991, 18(3): 287-291,T001 |
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| 作者姓名： | 石国华 曾庆诚 |
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| 作者单位： | 杭州大学电子工程系(石国华，竺树声，卢兆伦)，江西大学应用物理所(曾庆诚) |
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| 摘 要： | 本文讨论了XCD-H红外电视显微镜对硅片的无损检测，发现硅片在切割、研磨工艺中普遍引入了金属杂质拈污，它是降低器件成品率的主要因素之一由实验和应用证实了简单、可行的化学腐蚀洁净硅片法去除站污是十分有效的.
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| 关 键 词： | 硅片 玷污 无损检测 洁净 |
Nondestructive Evaluation of Metal Contamination in Silicon Wafers |
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| Shi Guohua Zhu Shusheng Lu Zhaolun. Nondestructive Evaluation of Metal Contamination in Silicon Wafers[J]. Journal of Zhejiang University(Sciences Edition), 1991, 18(3): 287-291,T001 |
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| Authors: | Shi Guohua Zhu Shusheng Lu Zhaolun |
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| Abstract: | In this paper, silicon wafers are detected nondestructively. It is found that the metal contamination produced in grmding process affects electrical properties of the device, but the method for eliminating metal contamination is presented by etching the wafers chemically. Applications of this process to the semiconductor device manufacture are demonstrated, including the increase in product efficiency and improvement of the ohmic contact. |
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| Keywords: | infrared TV microscopy nondestructive evaluation silicon wafer metal contamination silicon-purged process |
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