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Development of vapor phase decomposition-total-reflection X-ray fluorescence spectrometer
Authors:Motoyuki Yamagami  Akihiro Ikeshita  Yoshinobu Onizuka  Shinjiro Kojima  Takashi Yamada
Institution:

a X-ray Research Laboratory, Rigaku Corporation, 14-8 Akaoji, Takatsuki, Osaka 569-1146, Japan

b Rigaku Industrial Corporation, 14-8 Akaoji, Takatsuki, Osaka 569-1146, Japan

Abstract:A total reflection X-ray fluorescence spectrometer integrated with vapor phase decomposition, VPD-TXRF, was newly developed. This instrument was designed to achieve a minimum footprint, to avoid cross contamination during operation, and to protect people and instruments from HF gas. Comparisons between analysis by VPD-TXRF and by atomic absorption spectrometry (AAS) indicated very good agreement in a wide range, from 108 to 1012 atoms/cm2. The lower limits of detection (LLDs) were improved by two orders of magnitude compared with straight TXRF. For 300-mm Si wafers, the LLDs were 5×108 atoms/cm2 and 1×107 atoms/cm2 for Al and Ni, respectively. VPD-TXRF was able to perform ultra-trace analysis at the level of 108 atoms/cm2.
Keywords:Total-reflection X-ray fluorescence (TXRF)  Vapor phase decomposition (VPD)  Metal contamination  Silicon wafer  Metrology tool
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