| 一种多通道NAND Flash阵列的坏块管理方案 |
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| 引用本文： | 张雯,崔建杰,张新.一种多通道NAND Flash阵列的坏块管理方案[J].电子器件,2014,37(5). |
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| 作者姓名： | 张雯 崔建杰 张新 |
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| 作者单位： | 西安邮电大学 |
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| 基金项目： | 西安市科技计划基金资助项目 |
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| 摘 要： | 针对多通道NAND Flash阵列对可靠性的要求，提出一种坏块管理方案，优化坏块信息的存储和查询方法，把坏块和替换块地址映射表存储在FRAM中。测试数据证明，方案可以实现多通道NAND Flash阵列的坏块管理，保证了存储的可靠性。优化的坏块表及查询方法缩短了坏块查询时间，FRAM节省了有效块地址映射时间， 同时FRAM的铁电效应，进一步提高了数据存储的可靠性。
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| 关 键 词： | 大容量存储 坏块管理 二分法 NAND Flash阵列 FRAM |
Bad Block Management Method of Multi-Channel NAND Flash Array |
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| Abstract: | Aiming at the requirement about the reliability of the multi-channel NAND Flash array, a bad block management method is proposed. The method optimizes the bad block information storage and query methods. A FRAM stores the LBA-PBA address mapping table. The data of tests shows that the method can achieve multi-channel NAND Flash array of bad block management to ensure the reliability of storage. Optimized bad block creation method reduces the bad block query time. The FRAM saves the time of the valid block address mapping. And with the ferroelectric the reliability of data storage is further improved. |
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| Keywords: | large capacity storage bad block management dichotomy NAND Flash array FRAM |
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