| RF-LDMOS器件宏模型研究 |
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| 引用本文： | 顾新艳,孙陈超,刘斯扬.RF-LDMOS器件宏模型研究[J].电子器件,2015,38(6). |
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| 作者姓名： | 顾新艳 孙陈超 刘斯扬 |
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| 作者单位： | 南京工程学院 |
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| 基金项目： | 基于阵列全息的车辆振源识别与贡献排序方法研究 |
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| 摘 要： | 射频器件模型是射频电路仿真的基本要素之一。为了解决射频横向双扩散金属氧化物半导体晶体管（RF-LDMOS）缺乏准确SPICE模型的问题。此处提出了一种适用于带封装结构的RF-LDMOS器件宏模型建模及提模方法，并采用MBP软件进行验证分析。结果表明该宏模型建模方法能够很好的实现数据拟合，直流特性和射频特性的误差均在5%范围内，能够准确地反映器件的电学特性。
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| 关 键 词： | 封装RF-LDMOS 宏模型 MBP 电学特性 |
The Research of Macro Model for RF-LDMOS Device |
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| Abstract: | Radio frequency (RF) device model is one of the basic elements of the RF circuit simulation. To solve RF lateral double diffused metal oxide semiconductor transistor (RF-LDMOS) is lack of accurate SPICE model. A macro model and parameter-extraction method for packaged RF-LDMOS devices is introduced. The MBP tools are used for the verification and analysis, the results show that the macro model can achieve data fitting well , the model error of direct current (DC) characteristics and RF characteristics can be in the range of 5% and the model can accurately reflect the electrical characteristics of the device. |
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| Keywords: | Packaged RF-LDMOS macro model MBP electrical characteristics |
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