Ka 频段400 W 氮化镓高线性固态功放研制

介绍了一种Ka 频段400 W 氮化镓高线性度固态功放的工程实现。使用64 片GaN 功率芯片,采用微带 电桥与波导功分/ 合成网络相结合的方式进行功率合成,功放在2 GHz 的工作频带内连续波饱和输出功率大于400 W。 采用射频预失真线性化技术优化氮化镓功放线性度,功放三阶互调指标改善幅度大于9 dB,优于-33 dBc。功放选择带 热管的翅片散热器的强制风冷方案,提高了散热器的换热效率,散热性能良好。功放接口独立,并配置了完善的控保功 能,技术状态稳定,可靠性及实用性满足工程使用要求,适用于测控、通信等领域的毫米波发射系统。

Development of a Ka-Band 400 W GaN Highly Linear Solid-State Power Amplifier

This paper introduces an engineering realization of a Ka-band 400 W GaN highly linear solid-state power amplifier. 64 GaN power chips are used for power synthesis by combining microstrip bridge and waveguide power division / synthesis network. The continuous wave saturated output power of the power amplifier is greater than 400 W in the working frequency band of 2 GHz. Radio Frequency predistortion technology is applied, and the third-order intermodulation is better than -33 dBc and the improvement is up to 9 dB. To meet engineering and productive requirement, a good heat dissipation is designed. The control and maintenance functions are provided, the reliability and practicability meet the engineering requirements.