Determination of the dielectric function of porous silicon by high-order laser-harmonic radiation |
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| Authors: | F. De Filippo C. de Lisio P. Maddalena G. Lérondel T. Yao C. Altucci |
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| Affiliation: | (1) INFM, Dipartimento di Scienze Fisiche, Università di Napoli “Federico II”, Complesso Universitario di Monte S. Angelo, Via Cintia, 80126 Napoli, Italy, IT;(2) Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan, JP;(3) INFM, Dipartimento di Scienze Fisiche, Università di Napoli “Federico II”, Complesso Universitario di Monte S. Angelo, Via Cintia, 80126 Napoli, Italy, IT;(4) Dipartimento di Chimica, Università della Basilicata, Via N. Sauro 85, 85100 Potenza, Italy, IT |
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| Abstract: | Porous-silicon reflectance has been determined over a large energy range, from 1 eV to 16 eV, by combining a NIR/visible/UV spectrometer with a new VUV light source as laser-harmonic radiation. The porous-silicon dielectric function was deduced from reflectance measurements by Kramers–Kronig analysis. We point out that, for the first time, laser harmonics have been applied in the optical characterization of materials as a new and suitable alternative to synchrotron radiation. Received: 9 January 2001 / Accepted: 28 April 2001 / Published online: 20 June 2001 |
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| Keywords: | PACS: 78.66.Db 78.20.Ci 78.40.Fy |
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