| 一种有强健的续流开关的新型槽栅逆导IGBT |
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| 引用本文： | 朱利恒,陈星弼.一种有强健的续流开关的新型槽栅逆导IGBT[J].半导体学报,2014,35(8):084004-5. |
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| 作者姓名： | 朱利恒 陈星弼 |
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| 基金项目： | 国家自然科学基金(51237001), 中央高校基本科研业务费(E022050205) |
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| 摘 要： | The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode （FWD）, and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.
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| 关 键 词： | 续流二极管 IGBT 反向 绝缘栅双极晶体管 开关 沟槽 恢复过程 电流分布 |
A novel double trench reverse conducting IGBT with robust freewheeling switch |
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| Zhu Liheng and Chen Xingbi.A novel double trench reverse conducting IGBT with robust freewheeling switch[J].Chinese Journal of Semiconductors,2014,35(8):084004-5. |
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| Authors: | Zhu Liheng and Chen Xingbi |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor (RC-IGBT) results in the non-uniform current distribution in the integrated freewheeling diode (FWD), and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process. |
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| Keywords: | reverse conducting insulated gate bipolar transistor snapback current concentration |
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