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Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode |
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| Authors: | A Resf Brahimi R Menezla and M Benchhima |
| Institution: | Laboratory of Modeling and Conception of the Circuits Electronic, Department of Electronics, University Djillali Liab es, BP89. Sidi Bel Abbes 22000, Algeria;Laboratory of Modeling and Conception of the Circuits Electronic, Department of Electronics, University Djillali Liab es, BP89. Sidi Bel Abbes 22000, Algeria;Laboratory of Modeling and Conception of the Circuits Electronic, Department of Electronics, University Djillali Liab es, BP89. Sidi Bel Abbes 22000, Algeria |
| Abstract: | This work has for objective, the determination of the characteristic I(Breakdown voltage) of the inverse current in GaAs PN junction diode, subject to an reverse polarization while specifying the parameters that influence the Breakdown voltage of the diodes. In this work, we simulated the behavior of the ionization phenomenon by impact Breakdown by avalanche of the PN junctions, subject to an inverse polarization. |
| Keywords: | - The phenomenon of ionization by impact - The Integrals Of Ionizations In and Ip - The Potential Electrostatic and Electric Field Variation of the trap state density Nt |
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