| 具有微米/纳米复合粗化ITO的GaN基LED |
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| 引用本文： | 黄华茂,胡金勇,王洪.具有微米/纳米复合粗化ITO的GaN基LED[J].半导体学报,2014,35(8):084006-5. |
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| 作者姓名： | 黄华茂 胡金勇 王洪 |
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| 基金项目： | 国家高技术研究发展计划（2014AA032609）、广东省战略性新兴产业发展专项资金（2010A081002009、2011A081301004、2012A080302003）和中央高校基本科研业务费专项资金（2013ZM093、2013ZP0017） |
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| 摘 要： | Three types of textured indium-tin-oxide （ITO） surface, including nano-texturing and hybrid micro/nano-texturing with micro-holes （concave-hybrid-pattem） or micro-pillars （convex-hybrid-pattern）, were applied to GaN-based light-emitting diodes （LEDs）. The nano-texturing was realized by maskless wet-etching, and the micro-texturing was achieved by standard photolithography and wet-etching. Compared to LED chips with flat ITO surface, those with nano-pattern, concave-hybrid-pattern, and convex-hybrid-pattern exhibit enhancement of 11.3%, 15.8%, and 17.9%, respectively, for the light-output powers at 20 mA. The electrical performance has no degradation. Moreover, the convex-hybrid-pattern show higher light-output efficiency under small injection current, while the concave-hybrid-pattern exhibit better light-output efficiency at large injection current. The light- extraction efficiency is simulated by use of two-dimensional finite difference time domain method, and the numer- ical results are consistent with the experiments.
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| 关 键 词： | 铟锡氧化物 纳米图案 混合模式 发光二极管 GaN 纹理 二维时域有限差分法 湿法蚀刻 |
| 修稿时间： | 4/4/2014 12:00:00 AM |
GaN-based light-emitting diodes with hybrid micro/nano-textured indium-tin-oxide layer |
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| Huang Huamao,Hu Jinyong and Wang Hong.GaN-based light-emitting diodes with hybrid micro/nano-textured indium-tin-oxide layer[J].Chinese Journal of Semiconductors,2014,35(8):084006-5. |
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| Authors: | Huang Huamao Hu Jinyong and Wang Hong |
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| Institution: | 1 Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China;2 University of Technology, Guangzhou 510640, China;1 Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China;2 University of Technology, Guangzhou 510640, China;1 Engineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China;2 University of Technology, Guangzhou 510640, China |
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| Abstract: | Three types of textured indium-tin-oxide (ITO) surface, including nano-texturing and hybrid micro/nano-texturing with micro-holes (concave-hybrid-pattern) or micro-pillars (convex-hybrid-pattern), were applied to GaN-based light-emitting diodes (LEDs). The nano-texturing was realized by maskless wet-etching, and the micro-texturing was achieved by standard photolithography and wet-etching. Compared to LED chips with flat ITO surface, those with nano-pattern, concave-hybrid-pattern, and convex-hybrid-pattern exhibit enhancement of 11.3%, 15.8%, and 17.9%, respectively, for the light-output powers at 20 mA. The electrical performance has no degradation. Moreover, the convex-hybrid-pattern show higher light-output efficiency under small injection current, while the concave-hybrid-pattern exhibit better light-output efficiency at large injection current. The lightextraction efficiency is simulated by use of two-dimensional finite difference time domain method, and the numerical results are consistent with the experiments. |
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| Keywords: | light-emitting diodes hybrid micro/nano-textured indium-tin-oxide light-output |
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