Effects of pressure on the carrier behavior of HgSe |
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| Authors: | Tingjing Hu Xuefei Li Jingshu Wang Jinghai Yang |
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| Institution: | Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, Jilin, People's Republic of China |
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| Abstract: | In situ Hall effect measurement of HgSe was conducted up to 31?GPa. It was found that the carrier parameters changed discontinuously at each phase transition. The resistivity variation under compression was described by the carrier parameters. The decrease in cinnabar mobility indicates that the interaction between the helical chains becomes stronger under pressure. Combining the results of experiment and theory calculation, it can be concluded that in the phase transition process from zinc blende through cinnabar to rock salt, if Hg atom is mainly displaced , hole will be generated and its concentration will increase; on the contrary, if Se atom is mainly displaced, electrons will be generated and their concentration will increase. |
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| Keywords: | high pressure electrical properties phase transitions transport properties |
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