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Luminescence related processes in semiconductor nanocrystals —The strong confinement regime
Authors:V Jungnickel and F Henneberger
Institution:

Humboldt-Universität zu Berlin, Institut für Physik, Invalidenstr. 110, 10115, Berlin, Germany

Abstract:This paper summarizes systematic studies on the luminescence from CdSe nanocrystals in the situation of strong zero-dimensional confinement. We discuss the role of surface and defect states, the origin of the photo-darkening and demonstrate by calorimetric adsorption measurements that the internal quantum efficiency is in the range of some 10%. The lifetimes of the intrinsic excitations are strongly size-dependent. While the radiative recombination (≈ 1 ns) is dominant for larger nanocrystals, we observe a dramatic increase of the non-radiative rate below 4 nm as a result of the reduced volume to surface ratio. The combination of ultra-fast and size-selective excitation allows us to observe a progression of sharp LO-phonon lines signifying the zero-dimensional character of the nanocrystals and providing information on the strength of the phonon coupling and the homogeneous width of the quantum-confined ground state.
Keywords:Semiconductor nanocrystals  Strong confinement
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