Simple method for synthesis of silicon nanowire: Pulsed laser deposition in furnace from p-Si wafer target

Si nanowires (NWs) were fabricated in a vacuum furnace using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for the target, and no catalytic materials are used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various sizes and shapes with a substrate position inside the furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.