Fabrication of three-dimensional silicon structures by means of doping-selective etching (DSE) |
| |
| Affiliation: | 1. Institut d''Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d''Ascq Cedex, France;2. Centre de Recherche en Technologie des Semi-conducteurs pour l''Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles, Algeria;3. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nanhu Road, Changchun 130033, China;4. Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif 19000, Algeria;1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea;3. Department of Physics, COMSATS Institute of Information Technology, Lahore, 54000, Pakistan;1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;2. KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh, KSA;3. Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050, Tunisia;4. Faculty of Sciences of Bizerta, Tunisia;5. Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat, Kuwait;6. Departement of Electrical Engineering (ESAT), .K.U. Leuven, 3001 Leuven,Belgium;7. Faculty of Sciences,University of Hasselt, Martelarenlaan 42, 3500, Hasselt, Belgium;1. Department of Physics, University of California, Berkeley, California 94720, USA;2. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;3. Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;4. Berkeley Sensor & Actuator Center, University of California, Berkeley, California 94720, USA;5. Department of Chemistry, University of California, Berkeley, California 94720, USA;6. University of Chinese Academy of Sciences, Beijing, China;7. Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720, USA;8. Department Physics, University of California, Santa Cruz, California 95064, USA |
| |
| Abstract: | Despite its early discovery, doping-selective etching (DSE) of silicon sensor and actuator structures has not been widely used. The potential advantages of DSE are IC compatibility, new degrees of freedom in three-dimensional micromachining and full exploitation of the excellent mechanical properties of silicon. The mechanisms of DSE are both chemical and electrochemical in nature, and can be described as a ‘race’ between dissolution and passivation of the reaction products. The process has been monitored by studying the current-voltage characteristics of homogeneous silicon wafers. Model experiments on basic sensor structures, such as thin membranes and cantilever beams, have been performed. It is shown that the sequence in patterning the structures is crucial in determining the detailed geometry. This is partly expected due to the well-known anisotropy of alkaline etchants. Some as yet unreported effects of anisotropy will be subject to further investigations. Conclusively, DSE offers new and interesting possibilities in the fabrication of sensor and actuator elements. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
