Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor

This work reports development of yttrium doped copper oxide (Y−CuO) as a new hole transport material with supplemented optoelectronic character. The pure and Y-doped CuO thin films are developed through a solid-state method at 200 °C and recognized as high performance p-channel inorganic thin-film transistors (TFTs). CuO is formed by oxidative decomposition of copper acetylacetonate, yielding 100 nm thick and conductive (40.9 S cm⁻¹) compact films with a band gap of 2.47 eV and charge carrier density of ∼1.44×10¹⁹ cm⁻³. Yttrium doping generates denser films, Cu₂Y₂O₅ phase in the lattice, with a wide band gap of 2.63 eV. The electrical conductivity increases nine-fold on 2 % Y addition to CuO, and the carrier density increases to 2.97×10²¹ cm⁻³, the highest reported so far. The TFT devices perform remarkably with high field-effect mobility (μ_sat) of 3.45 cm² V⁻¹ s⁻¹ and 5.3 cm² V⁻¹ s⁻¹, and considerably high current-on/off ratios of 0.11×10⁴ and 9.21×10⁴, for CuO and Y−CuO films, respectively (at −1 V operating voltage). A very small width hysteresis, 0.01 V for CuO and 1.92 V for 1 % Y−CuO, depict good bias stability. Both the devices work in enhancement mode with stable output characteristics for multiple forward sweeps (5 to −60 V) at −1V_g.