Flexible Metal Oxide Semiconductor Devices Made by Solution Methods |
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Authors: | Jeong-Wan Jo Seung-Han Kang Jae Sang Heo Prof Yong-Hoon Kim Prof Sung Kyu Park |
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Institution: | 1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980 Republic of Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419 Republic of Korea;2. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980 Republic of Korea;3. Department of Medicine, University of Connecticut School of Medicine, Farmington, CT, 06030 USA;4. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419 Republic of Korea |
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Abstract: | For the fabrication of next-generation flexible metal oxide devices, solution-based methods are considered as a promising approach because of their potential advantages, such as high-throughput, large-area scalability, low-cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low-temperature, solution-processed, flexible, metal oxide semiconductor devices, from a single thin-film transistor device to fully integrated circuits and systems. The main challenges of solution-processed metal oxide semiconductors are introduced. Recent advances in materials, processes, and semiconductor structures are then presented, followed by recent advances in electronic circuits and systems based on these semiconductors, including emerging flexible energy-harvesting devices for self-powered systems that integrate displays, sensors, data-storage units, and information processing functions. |
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Keywords: | flexible electronics low-temperature processing semiconductors solution processing thin films |
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