| 高分子有机场效应晶体管中半导体薄膜结晶行为及微观结构变化的研究 |
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| 引用本文： | 田雪雁,赵谡玲,徐征,姚江峰,张福俊,贾全杰,陈雨,樊星,龚伟.高分子有机场效应晶体管中半导体薄膜结晶行为及微观结构变化的研究[J].物理学报,2011,60(2):27201-027201. |
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| 作者姓名： | 田雪雁 赵谡玲 徐征 姚江峰 张福俊 贾全杰 陈雨 樊星 龚伟 |
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| 作者单位： | (1)北京北旭电子玻璃有限公司,北京 100016; (2)北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京 100044; (3)中国科学院高能物理研究所,北京 100049 |
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| 基金项目： | 国家自然科学基金(批准号:60978060,10974013,10804006,10774013)、高等学校博士学科点专项科研基金(批准号:20090009110027,20070004024)、高等学校博士学科点专项科研基金(新教师基金课题)(批准号:20070004031)、北京市科技新星计划(批准号:2007A024)、北京市自然科学基金(批准号:1102028)、国家杰出青年科学基金(批准号:60825407)和国家重点基础研究发展计划(批准号:2010CB327705)资助的课题. |
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| 摘 要： | 为了探索高分子有机场效应晶体管(OFET)中高分子自组织机理与电荷传输的关联性,采用同步辐射掠入射X射线衍射技术研究了高分子OFET中以高度区域规则的聚(3-己基噻吩)(RR-P3HT)为代表的半导体层的结晶行为及微观结构组织变化,及其引起的高分子半导体电荷传输机理.研究发现,采用自组装单分子层(SAMs)技术进行界面修饰,可以完善绝缘层与RR-P3HT半导体层之间的界面效果.SAMs的形成改善了界面,可以有效地控制上层RR-P3HT半导体层的结晶性及微观结构,使较多的噻吩环面垂直于衬底、得到π-π堆积方向平行于衬底的二维微晶粒薄片结构,这种微观结构有效地形成了二维共轭电荷传输通道,完善了在RR-P3HT工作层生长过程中的自组织机理;并且对于RR-P3HT半导体工作层来说,慢速生长过程比快速生长过程更有利于有效的二维共轭微晶粒薄片生长,更能完善RR-P3HT工作层生长过程中的自组织机理.
关键词：
高度区域规则的聚(3-己基噻吩)有机场效应晶体管
同步辐射掠入射X射线衍射
自组织机理
微观结构
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| 关 键 词： | 高度区域规则的聚(3-己基噻吩)有机场效应晶体管 同步辐射掠入射X射线衍射 自组织机理 微观结构 |
| 收稿时间： | 4/4/2010 12:00:00 AM |
Crystallization and microstructure change of semiconductor active thin layer in polymer organic field-effect transistors |
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| Tian Xue-Yan,Zhao Su-Ling,Xu Zheng,Yao Jiang-Feng,Zhang Fu-Jun,Jia Quan-Jie,Chen Yu,Fan Xing,Gong Wei.Crystallization and microstructure change of semiconductor active thin layer in polymer organic field-effect transistors[J].Acta Physica Sinica,2011,60(2):27201-027201. |
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| Authors: | Tian Xue-Yan Zhao Su-Ling Xu Zheng Yao Jiang-Feng Zhang Fu-Jun Jia Quan-Jie Chen Yu Fan Xing Gong Wei |
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| Institution: | Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Beijing Asahi Glass Electronics Co. , Ltd. , Beijing 100016, China;Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China |
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| Abstract: | The crystallization and microstructure change of self-organization and the related conduction mechanisms of polymer semiconductor active thin layer in polymer organic field-effect transistors (OFET) are investigated by synchrotron radiation grazing incident X-ray diffraction ( GIXRD) for understanding the relationships between polymer self-organization and charge carry. The change of the crystalline microstructure of RR-P3HT clarifies the effect of SAMs for improving the interface between the insulator laye... |
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| Keywords: | regioregular poly(3-hexylthiophene) organic field-effect transistors synchrotron radiation grazing incident X-ray diffraction self-organization microstructure |
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