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Variational Calculations of Neutral Bound Excitons in GaAs Quantum-Well Wires
作者姓名:刘建军 邸冰 杨国琛 李树深
作者单位:[1]CollegeofPhysics,HebeiNormalUniversity,Shijiazhuang050016 [2]InstituteofPhysics,HebeiUniversityofTechnology,Tianiin300130 [3]NationalLaboratoryforSuperlatticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083
摘    要:The binding energy of an exciton bound to a neutral donor (D^0, X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.

关 键 词:砷化镓材料 量子阱 束缚能 波函数 哈密顿量
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