X-Ray standing wave analysis of bismuth implanted in Si(110) |
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| Authors: | N. Hertel G. Materlik J. Zegenhagen |
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| Affiliation: | (1) Institute of Physics, University of Aarhus, DK-800 Aarhus, Denmark;(2) Hamburger Synchrotronstrahlungslabor HASYLAB at DESY, Notkestrasse 85, D-2000 Hamburg, Federal Republic of Germany;(3) II. Institut für Experimentalphysik, Universität Hamburg, Hamburg, Federal Republic of Germany;(4) Present address: Physics Department, SUNYA, 1400 Washington Avenue, 12222, NY, Albany, USA |
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| Abstract: | Perfect crystal silicon samples implanted with 60 KeV Bi atoms along the [110] surface normal direction were analyzed with X-ray standing waves. Two reflection orders, (220) and (440) were used with synchrontron radiation to study systematically the impurity distribution function at 5 different doses ranging from 0.6 to 10×1014 Bi atoms/cm2. The analysis reveals the substitutional Bi position connected with a lattice expansion and the formation of precipitates at higher Bi doses as well as estimates for the Bi vibrational amplitude. |
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