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Demonstration of the N2 carrier process for LP-MOVPE of III/V's |
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| Authors: | M Hollfelder S Hon B Setzer K Schimpf M Horstmann Th Schpers D Schmitz H Hardtdegen H Lüth |
| Institution: | a Institut für Schicht- und lonentechnik. Forschungszentrum Jülich, D-52425, Jülich, Germany b AIXTRON Semiconductor Technologies GmbH. Kackertstrasse 15–17, D-52072, Aachen, Germany |
| Abstract: | The suitability of an N2 carrier in LP-MOVPE of GaInAs/InP device structures and for the growth of (Al)GaInP is investigated for the first time. Al-free GaInAs/InP HEMTs and MSM photodetectors exhibit cutoff frequencies of ft = 135 GHz and fmax = 200 GHz and a bandwidth of 16 GHz and responsivity of 0.27 A/W, respectively. AlGaInP and GaInP layers deposited using the optimized growth conditions showed excellent structural, optical and homogeneity properties. For example X-ray diffractograms with FWHMs as low as 15–16 arcsec for 1 μm thick layers and 300 K photoluminescence mappings over full 2 inch wafers with standard deviations of ±0.23 and ±0.26 nm were obtained for both materials. |
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