Diagnostics of height distribution of InAs/GaAs quantum dot arrays by means of carbon tetrachloride treatment in vapor phase epitaxy conditions |
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| Authors: | A V Zdoroveishev P B Demina I A Karpovich |
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| Institution: | 1.Nizhni Novgorod State University,Nizhni Novgorod,Russia;2.Physics of Solid State Nanostructures Research and Education Center,Nizhni Novgorod State University,Nizhni Novgorod,Russia;3.Research Physicotechnical Institute,Nizhni Novgorod State University,Nizhni Novgorod,Russia |
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| Abstract: | A technique for determination of InAs quantum dots bimodal distribution has been developed. This technique is based on vapor-chemical
etching of quantum dot arrays coated with thin GaAs layers and on combined investigation of the morphology and photoluminescence
spectra of etched quantum-size structures. It has been shown that, in some growth modes of quantum-size heterostructures by
metal-organic vapor phase epitaxy, bimodal arrays of large and small quantum dots are formed. The surface concentration of
large and small dots has been established to be about 2 × 109 and 3 × 1010 cm−2, respectively. |
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