Delineation of a p–n junction using dC/dX imagery produced by shear-mode scanning capacitance microscopy |
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Authors: | Y Naitou N Ookubo |
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Institution: | (1) Functional Materials Research Laboratories, NEC Corporation, Miyazaki 4-1-1, Miyamae-ku, Kawasaki 216–8555, Japan, JP |
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Abstract: | Using a laterally oscillating all-metallic probe, a scanning capacitance microscope (SCM) has been used to yield an image
of the spatial derivative of the local capacitance, dC/dX, where C and X are the local capacitance and the axis of the probe
tip locus on the sample surface, respectively. Bias fields, except for the ultra-high-frequency fields used for sensing the
capacitance, are not necessary to detect the dC/dX signal, which yields an image delineating clearly the depletion region
due to the p–n junction. Simultaneously with the dC/dX image, the new SCM can give images of topography and dC/dV if an alternating
field V is applied between the probe and sample.
Received: 19 March 2001 / Accepted: 22 March 2001 / Published online: 27 June 2001 |
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Keywords: | PACS: 07 79 -v 07 79 Fc 07 79 Lh |
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