Analysis of the spatial distribution of the constituting elements in amorphous solids: Laser ablation with ICP spectrometry

Amorphous materials of the systems Si/B/N/C and Ba/Si/Al/O/C, which are highly resistant against thermal and chemical attack, were analyzed using laser ablation inductively coupled plasma atomic emission (LA-ICP-AES) and mass spectrometry (MS) in order to prove the applicability of these techniques to this special type of materials. Homogeneity was evaluated and the concentrations of the main components were determined with a resolution of 50 μm. A good reproducibility was obtained using one element for internal standardization (0.3–0.7% RSD for Si and Al with Ba as internal standard and about 1.5% for B with Si as internal standard). Scanning white light interferometry employed for the measuring of the crater volumes was tested to support the internal standardization method. Received: 13 May 1998 / Revised: 6 July 1998 / Accepted: 10 July 1998