| Diode-Pumped Passively Q-Switched Yb：YAG Microchip Laser with a GaAs as Saturable Absorber |
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| 引用本文： | 张秋琳,冯宝华,张东香,傅盘铭,张治国,赵志伟,邓佩珍,徐军,徐晓东,王勇刚,马骁宇.Diode-Pumped Passively Q-Switched Yb：YAG Microchip Laser with a GaAs as Saturable Absorber[J].中国物理快报,2003,20(10):1741-1743. |
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| 作者姓名： | 张秋琳 冯宝华 张东香 傅盘铭 张治国 赵志伟 邓佩珍 徐军 徐晓东 王勇刚 马骁宇 |
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| 作者单位： | [1]LaboratoryofOpticalPhysics,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080 [2]ShanghaiInstituteofOpticsandFineMechanics,ChineseAcademyofSciences,Shanghai201800 [3]InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083 |
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| 摘 要： | A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52ns pulses at 1030nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.
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| 关 键 词： | 二极管泵浦 调Q激光器 Yb：YAG微片激光器 锁模激光器 砷化镓 可饱和吸收 GaAs |
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