高质量单层二硫化钼薄膜的研究进展

作为一种新型的二维半导体材料,单层二硫化钼薄膜由于其优异的特性,在电子学与光电子学等众多领域具有潜在的应用价值.本文综述了我们课题组在过去几年中针对单层二硫化钼薄膜的研究所取得的进展,具体包括:在二硫化钼薄膜的制备方面,通过氧辅助化学气相沉积方法,实现了大尺寸单层二硫化钼单晶的可控生长和晶圆级单层二硫化钼薄膜的高定向外延生长;在二硫化钼薄膜的加工方面,发展了单层二硫化钼薄膜的无损转移、洁净图案化加工、可控结构相变与局域相调控的方法,为场效应晶体管等电子学器件的制备与性能优化提供了基础;在二硫化钼异质结方面,研究了二硫化钼薄膜与其他二维材料形成的异质结的电学以及光电性质,为二维材料异质结的构筑和器件特性研究提供了实验参考;在二硫化钼薄膜功能化器件与应用方面,构筑了全二维材料、亚5 nm超短沟道场效应晶体管器件,验证了单层二硫化钼对短沟道效应的有效抑制及其在5 nm工艺节点器件中的应用优势;此外,利用制备的高质量单层二硫化钼和发展的器件洁净加工技术,实现了高性能柔性薄膜晶体管的集成,获得了超高灵敏度与稳定性的非接触型湿度传感器.我们在二硫化钼薄膜的制备、加工以及器件特性研究方面所取得的进展对于二硫化钼及其他二维过渡金属硫属化合物的基础和应用研究均具有指导意义.

Research progress of high-quality monolayer MoS2 films

As an emerging two-dimensional (2D) material, monolayer molybdenum disulfide films show excellent electrical and optical properties and have aroused great interest due to their potential applications in electronics and optoelectronics. In this paper, we review our works about molybdenum disulfide films in the past few years. Chemical vapor deposition (CVD) is a convenient and low-cost method to synthesize 2D materials. By oxygen-assisted CVD, the wafer-scale highly-oriented monolayer molybdenum disulfide films and large single-crystal monolayer molybdenum disulfide on various substrates have been prepared epitaxially. Preparation of high-quality monolayer molybdenum disulfide films is the key to measure its intrinsic properties and realize its large-scale applications. Besides the preparation of high-quality materials, the optimizing of transfer technique and fabrication technique are of equal importance for improving the properties of electronic and optoelectronic devices. Water-assisted lossless transfer, patterned peeling, structural change and local phase transition of monolayer molybdenum disulfide films pave the way for preparing and optimizing the functionalized devices. For example, water-assisted transfer and patterned peeling provide methods of preparing molybdenum disulfide samples with clean surfaces and interfaces. Phase transition in the contact area of field-effect transistor reduces the contact resistance effectively, which improves the electrical performance. In addition, the heterojunctions of molybdenum disulfide and other 2D materials show novel electrical and optical properties. As for the functional devices, ultrashort-channel field-effect transistors, integrated flexible thin film transistors, and humidity sensor array have been realized with monolayer molybdenum disulfide films. A grain boundary widening technique is developed to fabricate graphene electrodes for ultrashort-channel monolayer molybdenum disulfide transistors. Field-effect transistors with channel lengths scaling down to ≈ 4 nm can be realized reliably and exhibit superior performances, such as the nearly Ohmic contacts and excellent immunity to short channel effects. Furthermore, monolayer molybdenum disulfide films show excellent electrical properties in the measurement of integrated flexible thin film transistors. Under a uniaxial stain of 1%, the performance of the device shows no obvious change, revealing not only the high quality of CVD-grown molybdenum disulfide films, but also the stabilities of these flexible thin film transistor devices. Molybdenum disulfide humidity sensor array for noncontact sensation also shows high sensitivity and stability. Mobility and on/off ratio of the devices in the array decrease linearly with the relative humidity increasing, leading to a high sensitivity of more than 10⁴. The study of monolayer molybdenum disulfide films is universal and instructive for other 2D transition metal dichalcogenides.