拓扑半金属材料的单晶生长研究进展

拓扑半金属已经成为凝聚态物理研究的一个热点领域,这类材料的单晶生长是研究其物理性质的基础.目前,对于拓扑材料的研究已经形成了以理论计算为指引,对潜在的拓扑材料进行单晶制备,并结合物性测量对理论预言加以验证的科研合作方式.在这种科研团队合作中,单晶生长起衔接作用.本文介绍了近年来拓扑半金属材料单晶生长方法,涵盖了拓扑Dirac半金属、Weyl半金属、Node-Line半金属以及其他打破常规分类的拓扑绝缘体及拓扑半金属材料等,并针对各个材料,详细总结了其生长方法.

Research progress of single crystal growth for topological semimetals

Topological semimetals have attracted much attention and become a hot subject in condensed matter physics, and single crystal growth is the basis of the physical investigation on these materials. At present, the research of topological materials has formed a cooperation circle:presenting materials by theoretical calculation; single crystal growth; verification by experiments on single crystals. Single crystal growth has become a bridge between theory and experiment. Here in this paper, we introduce the single crystal growth of the topological semimetals presented in recent years, including topological Dirac semimetals, Weyl semimetals, Node-Line semimetals and other new classes of topological materials. The detailed growth methods are summarized in this paper for each material.