高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究

基于真空紫外光电阴极和背照式互补金属氧化物半导体(CMOS)图像传感器研制了紫外光响应的电子轰击CMOS(EBCMOS)器件,实现了EBCMOS器件在40 mlx光照度环境下的高分辨探测,电子图像灰度随电子能量的变化呈现出极好的线性关系.对器件成像分辨率测试的结果表明,在电场强度为5000 V/mm时,器件的空间分辨率可以达到25 lp/mm,与国际相关报道水平相当.研制的EBCMOS器件可直接在紫外弱光探测领域应用,如天文观察、高能物理、遥感测绘等,同时也可为下一步研制可见光和近红外敏感的EBCMOS器件提供参考.

High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection

High resolution and high sensitive low light level imaging sensors are crucial in many applications such as astronomical observation, high energy physics, night vision and remote sensing. The electron bombarded complementary metal oxide semiconductor (EBCMOS) sensor is a novel imager in which very high gain can be produced by hitting the semiconductor with high voltage without any noise generation. In addition, it can process high-definition image with kHz frame rate. These advatages make the EBCMOS an ideal device for ultrafast single-photon imgaing. In this article, we present an EBCMOS sensor working in the ultraviolet range by combing the technology of vacuum photocathode and back illuminated CMOS together. This EBCMOS sensor can realize very high resolution in 40 mlx light illumination environment. The achieved spatial resolution is 25 lp/mm (line paris per millimeter) when the electric field intensity is 5000 V/mm. The liner relation between electric field intensity and the resolution indicates that much better perofromance can be achieved if the electric field intensity increases to a much higher value. The EBCMOS sensor developed in this paper can be directly applied to UV weak light detection, moreover it will provide a good reference for further developing the visible and near infrared sensitive EBCMOS sensors.