| Abstract: | Because of the discrete charge storage mechanism, charge trapping memory(CTM) technique is a good candidate for aerospace and military missions. The total ionization dose(TID) effects on CTM cells with Al_2O_3/HfO_2/Al_2O_3(AHA) high-k gate stack structure under in-situ 10 keV x-rays are studied. The C-V characteristics at different radiation doses demonstrate that charge stored in the device continues to be leaked away during the irradiation,thereby inducing the shift of flat band voltage(V_(fb)). The dc memory window shows insignificant changes, suggesting the existence of good P/E ability. Furthermore, the physical mechanisms of TID induced radiation damages in AHA-based CTM are analyzed. |
