电子助进化学气相沉积金刚石中发射光谱的蒙特卡罗模拟

采用蒙特卡罗方法，对源料气体为CH4/H2混合气的电子助进化学气相沉积（EACVD）中 的氢原子(H)、碳原子(C)以及CH基团的发射过程进行了模拟.研究了CH4浓度、反应室气压 和衬底偏压等工艺参数对发射光谱及成膜的影响.研究发现，CH基团可能是有利于金刚石薄 膜生长的活性基团，而碳原子不是；偏压的升高可提高电子平均温度及衬底表面附近氢原子 的相对浓度；通过氢原子谱线可测定电子平均温度并找到最佳成膜实验条件.该结果对EACVD 生长金刚石薄膜过程中实时监测电子平均温度，有效控制工艺条件，生长出高质量的金刚石 薄膜具有重要的意义.关键词：蒙特卡罗模拟金刚石薄膜发射光谱

Monte Carlo simulation of optical emission spectra in electron assisted chemical vapor deposition of diamond

The optical emission spectra of atomic hydrogen, atomic carbon and radical CH in electron assisted chemical vapor deposition (EACVD) were studied by using the Monte Carlo simulation when CH4/H2 gas mixture was used as the input gases. Effects of the experimental parameters on emission spectra and synthesis of di amond films were investigated. The results obtained suggested that the CH radica ls should be considered as a precursor species for diamond deposition but atomic carbon C is not. The diamond growth rate may be enhanced by the substrate bias due to the changes of atomic hydrogen concentration and the increase of mean ele ctron temperature. A method of determining the mean temperature of electron was gained by using atomic hydrogen emission line, and the optimum experimental cond ition for diamond deposition was also obtained. These results are of great impor tance for depositing high_quality diamond films by controlling the conditions of technology efficiently.