Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber |
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Authors: | Jiasai Ma Yufei Li Jinlong Xu |
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Affiliation: | a Information Science and Engineering School, Shandong University, Jinan 250100, China b Institute of Crystal Materials, Shandong University, Jinan 250100, China |
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Abstract: | We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO4 laser working at 1342 nm by using an uncoated V3+:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO4 crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO4 crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO4 crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO4 laser can generate shorter pulse with higher peak power in comparison with a-cut one. |
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Keywords: | 42.55.Rz 42.60.Gd 42.70.Hj |
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