Effect of selective ion-implanted p-GaN on the junction temperature of GaN-based light emitting diodes |
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| Authors: | Yun-Wei Cheng |
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| Affiliation: | Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan |
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| Abstract: | A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the p-type GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the linearity of the luminescence-current curve of the device is improved without altering electrical properties. |
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| Keywords: | Ion-implantation Junction temperature Thermal dissipation Light emitting diode |
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