硅片双面研磨加工技术研究

介绍了硅片双面研磨的目的,重点分析了不同工艺参数对硅片研磨速率及表面质量的影响。通过不同粒径磨料的对比试验,得出减小磨料粒径能够有效改善硅片表面质量,减小损伤层深度,为后道抛光工序去除量的减少提供了条件,并且对实际生产工艺具有指导意义。同时分析了助磨剂在提高硅片表面质量中的作用。

The Research of Double-sided Polishing Silicon Processing Technology

This article focuses on the purpose of double-sided polishing silicon. It mainly analyses the different parameters of the silicon surface quality and milling rate. From different size of the abrasive contrast test, we find reducing the size of abrasive can effectively improve the quality of the silicon surface﹑reduce the depth of damage and road after the polishing process to remove the provision to reduce the amount of the conditions. Also, it can significance for the actual production process of guiding. At the same time the aids in the analysis of the silicon surface can improve the quality of the role.