| 新型多位非均匀沟道电荷俘获型存储器及新型虚拟源端的NAND阵列结构 |
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| 引用本文： | 古海明,潘立阳,祝鹏,伍冬,张志刚,许军.新型多位非均匀沟道电荷俘获型存储器及新型虚拟源端的NAND阵列结构[J].半导体学报,2010,31(10):104009-5. |
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| 作者姓名： | 古海明 潘立阳 祝鹏 伍冬 张志刚 许军 |
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| 基金项目： | Project supported by the National Basic Research Program of China （No. 2006CB302700）. |
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| 摘 要： | 为了解决传统多位存储NAND型存储器中位与位互相干扰的问题，本文提出了一种新型的用于多位存储的非均匀沟道电荷俘获型存储器及新型NAND结构。该器件能够很好地抑制SBE效应从而提供3比特/单元的存储能力。由于n-缓冲区的存在，由SBE效应导致的阈值电压漂移能够减小到400mV，在3比特/单元的存储能力下最小阈值电压窗口可以达到750mV。本器件还引入了富硅氮氧化硅层最为电荷俘获层，从而很好地提高了器件的电荷保持特性。
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| 关 键 词： | NAND型 非均匀沟道 虚拟设备 阵列 捕捉 电荷 体源 记忆 |
| 收稿时间： | 3/17/2010 2:36:46 PM |
| 修稿时间： | 4/15/2010 3:05:15 PM |
Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array |
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| Gu Haiming,Pan Liyang,Zhu Peng,Wu Dong,Zhang Zhigang and Xu Jun.Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array[J].Chinese Journal of Semiconductors,2010,31(10):104009-5. |
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| Authors: | Gu Haiming Pan Liyang Zhu Peng Wu Dong Zhang Zhigang and Xu Jun |
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| Institution: | Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory (NUC-CTM) device with virtual-source NAND-type array architecture, which can effectively restrain the second-bit effect (SBE) and provide 3-bit per cell capability. Owing to the n- buffer region, the SBE induced threshold voltage window shift can be reduced to less than 400 mV and the minimum threshold voltage window between neighboring levels is larger than 750 mV for reliable 3-bit operation. A silicon-rich SiON is also investigated as a trapping layer to improve the retention reliability of the NUC-CTM. |
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| Keywords: | multi-bit storage non-uniform channel charge trapping memory NAND array SiON layer |
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