| 界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响 |
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| 引用本文： | 汤晓燕,张义门,张玉明,郜锦侠.界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响[J].物理学报,2003,52(4):830-833. |
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| 作者姓名： | 汤晓燕 张义门 张玉明 郜锦侠 |
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| 作者单位： | 西安电子科技大学微电子研究所,西安710071 |
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| 基金项目： | 国家自然科学基金(批准号：19972010)资助的课题. |
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| 摘 要： | 针对界面态密度在禁带中的不均匀分布，分析了界面态电荷对n沟6H碳化硅MOSFET场效应迁移率的影响.分析结果显示，界面态电荷使n沟碳化硅器件的场效应迁移率明显降低.并给出了实验测定的场效应迁移率和反型层载流子迁移率的比值与界面态密度之间关系.
关键词：
碳化硅
界面态
反型层迁移率
场效应迁移率
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| 关 键 词： | 碳化硅 界面态 反型层迁移率 场效应迁移率 |
| 文章编号： | 1000-3290(2003)04-0830-04 |
| 收稿时间： | 2001-12-07 |
| 修稿时间： | 6/3/2002 12:00:00 AM |
Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET |
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| Tang Xiao-Yan,Zhang Yi-Men,Zhang Yu-Ming and Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET[J].Acta Physica Sinica,2003,52(4):830-833. |
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| Authors: | Tang Xiao-Yan Zhang Yi-Men Zhang Yu-Ming and Gao Jin-Xia |
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| Abstract: | The effect of interface state charges on the field-effect mobility of n-channel 6H-SiC MOSFET is analyzed based on the nonuniform distribution of interface state density in the energy gap. The results of the analysis show that interface state charges have the influence of lowering the field-effect mobility in n-channel SiC MOSFET. A relationship has been established between the ratio of the experimentally determined field-effect mobility to the inversion-layer carrier mobility and interface states. |
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| Keywords: | silicon carbide interface state inversion-layer mobility field-effect mobility |
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