On the early deposition of GaP onto GaAs |
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Authors: | K. Richter |
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Affiliation: | Siemens AG, Forschungslaboratorien, Erlangen, Germany |
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Abstract: | It has been examined whether the presence of liquid Ga produced by the thermal decomposition of the GaAs substrate could influence the deposition of GaP. It was found that the surface tension of liquid Ga changed quickly and sensitively with small initial changes of the atmosphere in the reactor. Model experiments explained why and when the presence of free HCl is disadvantageous for the process. |
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