Compositional dependence of the thermal,structural, and electrical properties of AsTeI glasses

Thermal, structural, and electrical properties of semiconducting AsTeI (and AsTe) glasses have been examined as a function of concentration. Analytical techniques have been developed for quantitative chemical analysis of all three components. Differential scanning calorimetry data indicate a broad endothermic reaction, T_min ∼ 145 °C, above the glass transition (T_g = 120 ± 8 °C) for iodine compositions of 0 to ∼ 20 at%. Above this reaction temperature the thermal data are composition dependent. For glasses with I ? 35 at %, T_g is much lower (65–70 °C) and the endothermic reaction is much sharper with a minimum at ∼ 133 °C. The wide variation in thermal properties with composition suggests that electrical effects associated with high temperatures (e.g. switching and memory phenomena) may also be composition dependent, as well as being dependent upon kinetics. Structural studies show that phase segregation above T_g is dependent upon kinetics as well as upon temperature. Thermal, structural, and electrical data give evidence that As₂Te₃ exists as a unit in the non-crystalline state. This structural unit, stable at high temperatures, is present in the molten material and is thought to be present as the supercooled liquid is quenched. The short-range order extends to long-range order upon devitrification and the first crystalline phase detected is monoclinic As₂Te₃. Apparently metastable under the conditions of formation, this phase converts to a previously unreported fcc phase upon further heat treatment. Similar crystalline structures are known to be associated with thermally- and electrically-induced memory phenomena in AsTeGe and AsTeI glasses. Density measurements at room temperature show that (1) there are no phase miscibility gaps in the glass substructure or different crystalline phases segregating as the I content is varied, and (2) there is a large change in molar volume with increasing I concentration, whereas the molar weight does not change significantly. Electrical conductivity, σ, data in the region around room temperature, show that the σ₀ values, determined from σ = σ₀e^−E/kt, range from 10² to 10³ (Ω-cm)⁻¹. A possible dependence of σ₀ on I content may be due to changes in molar volume. The more homogeneous glasses appear to show breakpoints in the σ versus 1/T data; the corresponding changes in E are only 0.02–0.06 eV, with E = 0.04 eV being most frequently observed. For As₅₀Te_50−xI_x glasses, σ at a given temperature increases as the iodine concentration is increased to about 5 at % and then decreases with further increase in I content. Correspondingly there is a minimum in the E versus I concentration data at I ∼ 5 at %. Results suggest that dependence of the σ breakpoints on glass homogeneity and the variation of E with I concentration may be due to trapping effects.