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Efficient intensity modulation due to surface acoustic waves on windows of the AlGaN/InGaN multiple quantum well laser |
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| Authors: | S. M. Abrarov T. W. Kang T. W. Kim |
| Affiliation: | a Quantum-Functional Semiconductor Research Centre, Dongguk University, 3-26 Pil-dong, Chung-Ku, Seoul 100-715, South Korea;b Advanced Semiconductor Research Centre, Division of Electrical and Computer Engineering, Hanyang University, Seoul 133-791, South Korea |
| Abstract: | An alternative method for modulation of light generated by AlGaN/InGaN multiple quantum well laser with quartz antireflective (AR) coatings covering the resonator windows was modelled and studied theoretically. Disturbance of the piezoelectric coatings caused by surface acoustic waves (SAW) results in efficient intensity modulation of the laser beam. The model for the laser diode operating at DC demonstrates that the modulation factor can exceed 0.2 in sub-nanometer SAW displacement. For quarter-wave AR films, the carrier frequency of modulated beam has twice the frequency of SAW. |
| Keywords: | Laser diode Intensity modulation Antireflection coating Surface acoustic waves |
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