Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations; applications to selective area epitaxy |
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| Authors: | P Legay J L Benchimol F Alexandre and J C Harmand |
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| Institution: | a France Télécom, CNET, PAB, Laboratoire de Bagneux, 196 Avenue H Ravera, BP 107 F-92225 Bagneux Cedex France |
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| Abstract: | In order to optimize the shape of chemical beam epitaxy (CBE) selective area growth, growth rates on (100), (111)B, (111)A and (110) substrate orientations have been examined for GaAs and InP materials. (111)B GaAs growth rate appears to be drastically enhanced at low V/III ratio, which has been applied to grow selective GaAs patterns limited by vertical sidewalls. Concerning InP, high growth rates were obtained on all orientations. This was used to perfectly fill a rectangular groove by selective embedded InP growth. |
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