Properties of GaAs/InGaAs quantum-size structures containing δ〈Mn〉-doped layers |
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| Authors: | O. V. Vikhrova Yu. A. Danilov Yu. N. Drozdov B. N. Zvonkov F. Iikawa M. J. S. P. Brasil |
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| Affiliation: | (1) Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, Russia;(2) Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia;(3) Instituto de Fisica Gleb Wataghin, Universidade de Campinas, Campinas, Brazil |
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| Abstract: | Properties of structures containing an InGaAs quantum well (QW) or InAs quantum dots (QDs) as well as δ〈C〉-and δ〈Mn〉-doped layers are investigated. Most of these structures are fabricated by the MOCVD epitaxy method; δ〈Mn〉-doped layers are obtained by low-temperature laser deposition directly in the epitaxial reactor. The structures under study exhibit three conduction channels: the δ〈C〉-doped layer, δ〈Mn〉-doped layer, and QW or wetting layer in the case of QDs. The contribution of each channel into the total conduction depend on the measurement temperature. Photoluminescence of the structures as a function of thickness of δ〈Mn〉-doped layer is studied. |
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