Effect of the growth conditions on infrared upconversion efficiency of CaS: Eu, Sm thin films |
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| Authors: | W.H. Fan X. Hou W. Zhao X.J. Gao W. Zou Y. Liu |
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| Affiliation: | (1) State Key Lab. of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P.R. China (Fax: +86-411/4675-584, E-mail: fanwh@263.net), CN;(2) State Key Lab. of Transient Optics and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710068, P.R. China, CN |
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| Abstract: | High-quality electron-trapping thin films CaS: Eu, Sm with red light output have been successfully deposited on quartz and single-crystal silicon substrates by electron beam evaporation (EBE) and radio frequency (RF) magnetron sputtering in vacuum and H2S partial pressures. Infrared upconversion efficiency of CaS: Eu, Sm thin films under different growth conditions has been investigated by using ultrashort infrared (IR) laser pulse with 20 ps (full width at half-maximum (FWHM)). The results show that upconversion efficiency of CaS: Eu, Sm thin films depends strongly on growth conditions in spite of the existence of “exhaustion” phenomena. Microstructures identified by X-ray diffraction (XRD) indicate that crystallinity of CaS films relies on both substrate materials and growth conditions. The stoichiometric composition of CaS films was measured by secondary-ion mass spectrometry (SIMS). The post-annealing process was found to promote grain growth and activate strong luminescence so that it could obviously improve upconversion efficiency of CaS: Eu, Sm films, even though it had negative influence on transmittance and spatial resolution of these films. Received: 5 June 2000 / Accepted: 7 June 2000 / Published online: 23 August 2000 |
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| Keywords: | PACS: 78.65 68.55 81.15 |
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