| Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases |
| |
| 引用本文： | 秦琦 郭丽伟 周忠堂 陈弘 杜小龙 梅增霞 贾金峰 薛其坤 周均铭. Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases[J]. 中国物理快报, 2005, 22(9): 2298-2301 |
| |
| 作者姓名： | 秦琦 郭丽伟 周忠堂 陈弘 杜小龙 梅增霞 贾金峰 薛其坤 周均铭 |
| |
| 作者单位： | State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| |
| 基金项目： | Supported by the National Natural Science Foundation under Grant Nos 60476044, 60376004 and 60021403, and the National Key Basic Research and Development Programme of China under Grant Nos 2002CB311903 and 2002CB613500. |
| |
| 摘 要： |
|
| 关 键 词： | 二极管 PN结 场致发光 异质体 电子散射 |
| 收稿时间： | 2005-05-10 |
| 修稿时间： | 2005-05-10 |
Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases |
| |
| Qin Qi;Guo LiWei;Zhou ZhongTang;Chen Hong;Du XiaoLong;Mei ZengXia;Gu JinFeng;Xue JiKun;Zhou JunMing. Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases[J]. Chinese Physics Letters, 2005, 22(9): 2298-2301 |
| |
| Authors: | Qin Qi Guo LiWei Zhou ZhongTang Chen Hong Du XiaoLong Mei ZengXia Gu JinFeng Xue JiKun Zhou JunMing |
| |
| Abstract: | Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 57Ohm are observed under forward bias. An unusual emission at 390ram appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 57Ohm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states. |
| |
| Keywords: | |
| 本文献已被 维普 等数据库收录！ |
