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The relaxation rate of the magnetic moment of a shallow acceptor center as a function of impurity concentration in silicon |
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| Authors: | T N Mamedov D G Andrianov D Herlach V N Gorelkin K I Gritsai O Kormann J Major A V Stoikov U Zimmermann |
| Institution: | 1. Joint Institute for Nuclear Research, Dubna, Moscow oblast, 141980, Russia 2. Giredmet State Institute of Research and Design in the Rare-Metals Industry, Moscow, 109017, Russia 3. Paul Scherrer Institut, Villigen PSI, CH-5232, Switzerland 4. Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow oblast, 141700, Russia 5. Max-Planck-Institut für Metallforschung, Stuttgart, D-70569, Deutschland 6. Institut für Theoretische und Angewandte Physik, Universit?t Stuttgart, Stuttgart, D-70569, Deutschland |
| Abstract: | A study is made into the temperature dependence of residual polarization of negative muons in crystalline silicon with the concentration of impurity of the n-and p-types ranging from 8.7×1013 to 4.1× 1018 cm?3. The measurements are performed in a magnetic field of 1000 G transverse to the muon spin, in the temperature range from 4.2 to 300 K. The form of the temperature dependence of the relaxation rate v of the magnetic moment of the μAl0 acceptor in silicon is determined. For a nondegenerate semiconductor, the relaxation rate depends on temperature as v ∝ T q (q ≈ 3). A variation in the behavior of the temperature dependence and a multiple increase in the relaxation rate are observed in the range of impurity concentration in excess of 1018 cm?3. The importance of phonon scattering and spin-exchange scattering of free charge carriers by an acceptor from the standpoint of relaxation of the acceptor magnetic moment is discussed. The constant of hyperfine interaction in an acceptor center formed by an atom of aluminum in silicon is estimated for the first time: |A hf (Al)/2π| ～ 2.5×106s?1. |
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