Preparation of thin films of platinum group metals by pulsed MOCVD. I. Deposition of Ir layers |
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| Authors: | N. V. Gelfond N. B. Morozova P. P. Semyannikov S. V. Trubin I. K. Igumenov A. K. Gutakovskii A. V. Latyshev |
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| Affiliation: | 1.A. V. Nikolaev Institute of Inorganic Chemistry, Siberian Division,Russian Academy of Sciences,Novosibirsk,Russia;2.A. V. Rzhanov Institute of Semiconductor Physics, Siberian Division,Russian Academy of Sciences,Novosibirsk,Russia |
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| Abstract: | Pulsed MOCVD with the in situ mass spectrometric control of the deposition process is employed to obtain ultrathin Ir layers with a thickness from units to tens of nanometers. The role of the reaction medium, precursor nature, and deposition temperature in the formation of the nanocrystalline structure of films is revealed. The deposition of Ir from Ir(acac)3 in the oxygen atmosphere results in the formation of dense homogeneous structures, while in vacuum or in the hydrogen atmosphere, nanosized granular Ir layers are deposited. When Ir(CO)2(acac) is used, Ir films with a granular structure are obtained regardless of the reaction medium. |
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