Frequency dependence of junction capacitance of BPW34 and BPW41 p-i-n photodiodes

This article investigates the frequency dependence of small-signal capacitance of silicon BPW34 and BPW41 (Vishay) p-i-n photodiodes. We show that the capacitance-frequency characteristics of these photodiodes are well-described by the Schibli and Milnes model. The activation energy and the concentration of the dominant trap levels detected in BPW34 and BPW41 are 280–330 meV and 1.1×10¹²−1.2×10¹² cm⁻³, respectively. According to the high-frequency C-V measurements, the impurity concentrations are determined to be about 5.3×10¹² and 1.9×10¹³ cm⁻³ in BPW41 and BPW34, respectively using the method of ΔV/Δ(C ⁻²) vs. C.