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On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic field
Authors:M.A. Grado-Caffaro  M. Grado-Caffaro
Affiliation:C/Julio Palacios 11, 9-B, 28029 Madrid, Spain
Abstract:The sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a perpendicular magnetic field is determined quantitatively by means of a suitable merit parameter. The values taken on by this parameter are discussed in terms of changes in the temperature and in the magnetic-field strength.
Keywords:Strained quantum-well laser   Sensitivity   Temperature   Magnetic field
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