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Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers

Authors:	Z.G. Lu J.R. Liu Z.J. Jiao P.J. Barrios J. Caballero

Affiliation:	^a Institute for Microstructural Science, National Research Council, Ottawa, ON, K1A 0R6, Canada ^b Department of Electrical and Computer Engineering, Concordia University, Montreal, QC, H3G 1M8, Canada

Abstract:	We have designed, grown and fabricated InAs/InP quantum dot (QD) waveguides as the gain materials of mode-locked lasers (MLLs). Passive InAs/InP QD MLLs based on single-section Fabry-Perot (F-P) cavities with repetition rates from 10 GHz to 100 GHz have been demonstrated in the C- and L-band. Femtosecond (fs) pulses with pulse duration of 295 fs have been achieved. The average output power is up to 50 mW at the room temperature of 18 °C. By using the external fiber mixed cavities fs pulse train with a repetition rate of 437 GHz has been generated. We have also discussed the working principles of the developed QD MLLs.

Keywords:	Quantum dot InAs/InP semiconductor materials Mode-locked laser Fabry-Perot cavity C- and L-band Femtosecond pulses High repetition rate
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